micron technology inc (MU:NASDAQ GS)
micron technology inc (MU) Key Developments
Micron Technology Inc. announced a new PCIe all-flash I/O accelerator to improve overall performance in enterprise servers, appliances and storage platforms. The new Micron P420m combines consistent performance with the inherent power efficiency of an all-flash system to deliver improved economics for enterprise data centers. The P420m accelerates performance of today's demanding data center applications, including online transaction processing (OLTP), data warehousing and virtualization. Ultimately, Micron's P420m ends the wait game for digital data. It features ultra-low latency performance that enables fast and predictable response times to information frequently used in data center environments. When tested against competing PCIe solutions in a MySQL server running an OLTP benchmark, the P420m is the fastest and most consistent performer, delivering more than 3,200 web server requests per second. It handily manages online requests during peak traffic times, improving the overall end-user experience. The P420m is designed using Micron's custom-designed ASIC controller, advanced 25-nanometer (nm) multilevel cell (MLC) NAND flash technology, DRAM, firmware and drivers to create a truly vertically integrated solution. The vertical integration begins with intimate knowledge of the NAND media and extends all the way to the end-system design, manufacture and drivers. This end-to-end involvement ensures delivering the ultimate level of storage quality and efficiency. The P420m uses Micron's Extended Performance and Enhanced Reliability Technology (XPERT) architecture, which closely incorporates the storage and controller through highly optimized firmware algorithms and hardware enhancements. The end result is a set of market-focused enterprise features that deliver ultra-low latencies, improved data transfer time, power-loss protection and cost-effectiveness, along with higher capacities and power efficiency.
Micron Technology Inc. Presents at Deutsche Bank Semiconductor One on One Day, May-09-2013 . Venue: Four Seasons Hotel, San Francisco, California, United States.
The University of Illinois filed a patent infringement action against Micron Technology Inc. During the litigation, Micron sent an email to a number of individuals, which included many professors at the University of Illinois in the engineering department. A part of the email stated that because Micron remains a defendant in a patent infringement lawsuit that UIUC filed against Micron in Federal court in Illinois on December 5, 2011, effective immediately, Micron will no longer recruit UIUC students for open positions at any of Micron's world-wide facilities. The University of Illinois moved for an injunction to bar Micron from sending further communications that it characterized as harassing and meant to coerce it into settling its patent litigation lawsuit. Micron asserted that the motion should be denied and that the University should be sanctioned for filing the motion. The district court found the request to enjoin any future 'harassing' emails problematic for several reasons. First, the term 'harassing' was vague and likely violated Fed.R.Civ.P. 65(d)(1)(C), which provides that every order granting an injunction must describe in detail the acts restrained. The district court did not believe that it could frame an order, given the University's broad request, that would be meaningful and that would also comply with Rule 65. Second, enjoining future actions, particularly actions involving speech, would raise very serious First Amendment issues. Third, the University was seeking to enjoin an alleged injury that was unrelated to the underlying complaint of patent infringement. The district court concluded that even if the court construed the University's request as one for permanent relief, the University had not shown any irreparable harm.
Intermolecular, Inc. announced that it has entered into a multi-year technology development and IP licensing agreement with Micron Technology, Inc. The collaboration will involve development activities at Intermolecular's R&D center in San Jose and will leverage Intermolecular's High Productivity Combinatorial (HPCTM) innovation platform.
Tower Semiconductor Ltd. is the only bidder for the acquisition of Kiryat Gat fab from Micron Technology Inc., sources told Globe. Maxim Integrated Products, Inc. and Altis Semiconductor SA are among the other interested parties for Kiryat Gat fab. The price for the fab is around $30 million, which is only a fraction of the investment necessary to take it over with much more required in investment in equipment.
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