samsung electr-gdr (SSNHZ) Key Developments
Samsung Electronics Unveils Limited Edition Galaxy Note Edge
Oct 19 14
Samsung Electronics has revealed a new addition to its Galaxy Note series with the launch of the limited edition Galaxy Note Edge. The device was launched as part of the Galaxy Note 4 World Tour in Dubai. Taking the mobile experience to the next level the Galaxy Note Edge features a one-of-a-kind Edge Screen which offers users a totally revolutionary way of accessing information and engaging with their mobile device. The Galaxy Note Edge's unique curved Edge screen provides quick access to frequently used apps alerts and device functionality - even when the cover is closed - all with the swipe of a thumb. The design of the device also enables users to receive notifications directly on the Edge Screen while watching videos without disturbing their viewing.
SK Telecom, Samsung Unveil True Real-Time Mobile Streaming Tech
Oct 9 14
SK Telecom, in partnership with Samsung Electronics, has completed the development of 'True Real Time Mobile Streaming' technology. The partners have also announced they have achieved the service's first demonstration over a commercial LTE network. Applied with the MPEG Media Transport (MMT) media transport standard, True Real Time Mobile Streaming Technology is designed to improve the live mobile streaming experience for smartphone and tablet users by reducing latency.
Samsung Electronics Starts Mass Production of 3-bit 3D V-NAND Flash Memory
Oct 9 14
Samsung Electronics Co. Ltd. announced that it has begun mass producing the 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs). The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 128 gigabits (Gb) of memory storage. In Samsung's V-NAND chip structure, each cell is electrically connected to a non-conductive layer using charge trap flash (CTF) technology. Each cell array is vertically stacked on top of one another to form multibillion-cell chips. The use of 3 bit-per-cell, 32-layer vertically stacked cell arrays sharply raises the efficiency of memory production. Compared to Samsung's 10 nanometer-class 3-bit planar NAND flash, the new 3-bit V-NAND has more than doubled wafer productivity. Samsung introduced its first generation V-NAND (24 layer cells) in August 2013, and introduced its second generation V-NAND (32-layer) cell array structure in May 2014. With the launch of the 32-layer, 3-bit V-NAND, The 3-bit 3D V-NAND will considerably expand market adoption of V-NAND memory, to SSDs suitable for general PC users, in addition to efficiently addressing the high-endurance storage needs of most servers.
Samsung Introduces Galaxy Tab Active Rugged Business Tablet
Oct 9 14
Samsung's Galaxy Tab Active, an enterprise-ready tablet that's ruggedized for work outside the office, features water resistance and shock protection. Samsung's first business-targeted and ruggedized tablet, the new Galaxy Tab Active, is available for preorders and will be shipping by the beginning of November. With an 8-inch display, anti-shock protection, IP67-certified water resistance and multiple charging options, the new tablet can be used by workers in the field who need a device that can function in harsh conditions outside of the office. The Galaxy Tab Active also includes a replaceable battery so that workers can use it for extended periods even when they don't have access to charging facilities. Each battery lasts for an estimated 10 hours, according to the company. The anti-shock protection includes an optional protective rubber case that provides drop protection from up to 4 feet, while the IP67 certification means that the machine will survive temporary immersion in water. The new tablets also feature enterprise-ready compatibility with Citrix and SAP certification for SAP Work Manager and SAP CRM Manager, with additional built-in application support and capabilities to come.
Samsung Electronics Co., Ltd. Introduced its New Near Field Communication Chip S3FWRN5
Oct 8 14
Samsung Electronics Co. Ltd. introduced its new near field communication (NFC) chip, the S3FWRN5, which features high radio frequency 'RF' performance and small package size. The S3FWRN5's RF performance doubles the range in both reader and card emulation modes, when compared to that of its predecessor, the S3FNRN3. With a mere package size of 2.4mm x 2.4mm, the industry's smallest for stand-alone NFC IC's, the new NFC IC offers mobile device designers a more flexible and efficient printed circuit board 'PCB' layout. For smartphone manufacturers, the chip's pin-to-pin compatibility also allows convenient application as a stand-alone NFC IC or NFC System-in-Package 'SiP' with embedded secure element 'eSE'. The S3FWRN5 is also equipped with Samsung's low power sensing 'LPS' technology, a newly optimized algorithm to sense the signals at the lowest possible level of power consumption. The technology minimizes the NFC IC's energy consumption, when it sends out continuous signals to recognize other NFC-enabled devices or NFC tags. By adopting LPS technology, the chip's power requirements are reduced by approximately 25% when compared to Samsung's most recent NFC product. The S3FWRN5 is also equipped with Samsung's low power sensing 'LPS' technology, a newly optimized algorithm to sense the signals at the lowest possible level of power consumption. The technology minimizes the NFC IC's energy consumption, when it sends out continuous signals to recognize other NFC-enabled devices or NFC tags. By adopting LPS technology, the chip's power requirements are reduced by approximately 25% when compared to Samsung's most recent NFC product.