July 12, 2014 2:24 PM ET

Electronic Equipment, Instruments and Components

Company Overview of SiOnyx, Inc.

Company Overview

SiOnyx, Inc. engages in commercializing a semiconductor process that enhances the infrared sensitivity of silicon-based photonics. It focuses on improving the performance of light sensing devices for consumer, commercial, and defense related applications. The company also provides black silicon, a drop-in solution for the solar cell lines that is critical in supporting roadmap architectures requiring a planar back surface for dielectric passivation. SiOnyx, Inc. was incorporated in 2005 and is based in Beverly, Massachusetts.

100 Cummings Center

Suite 243F

Beverly, MA 01915

United States

Founded in 2005





Key Executives for SiOnyx, Inc.

Chief Executive Officer
Chief Financial Officer
Vice President of Operations & Quality
Age: 50
Vice President of Business Development
Compensation as of Fiscal Year 2014.

SiOnyx, Inc. Key Developments

SiOnyx, Inc. Announces the XQE Family of IR Enhanced Ultra-Low Light CMOS Image Sensors

SiOnyx, Inc. announced the XQE family of CMOS image sensors. XQE image sensors deliver unprecedented performance advantages in infrared imaging with sensitivity enhancements as high as 10x incumbent solutions. The SiOnyx XQE family includes three new high performance sensors: the 1.3M pixel XQE-1310, the 1.0M pixel XQE-0920, and the 0.6M pixel XQE-0570. The XQE sensor family is based upon SiOnyx' breakthrough black silicon semiconductor process technology that enhances the sensitivity of silicon based light detectors. Infrared sensitivity is critical in many existing and emerging mass-market applications including biometrics, eye tracking, natural human interface and surveillance. In human interface applications like eye tracking and biometrics, IR sensing has the advantage of operating over a wide variety of lighting conditions without interfering with the user's visual experience. In surveillance, enhanced IR sensitivity takes advantage of the naturally occurring IR 'nightglow' to enable imaging under conditions that normally require very expensive image intensified night vision equipment. All sensors in the XQE family share the benefits of ultra-low read noise for extended low light imaging and 72dB of native dynamic range. Additionally, all XQE sensors have on-chip HDR features that allow up to 120dB dynamic range capability. XQE sensors are fabricated with a standard CMOS process that offers low power, low dark current, and no sensor cooling requirements. For applications from moonless night sky surveillance (<0.001 Lux) to biometrics and gesture UI, the SiOnyx XQE image sensors will redefine the way IR imaging systems are specified and deployed. Device Format Resolution Pixel Size; XQE-1310 1" 1280 x 1024 10 x 10umXQE-0920 1/2" 1280 x 720 5.6 x 5.6umXQE-0570 1/3" 872 x 654 5.6 x 5.6umSiOnyx XQE image sensors are sampling in Q2-2013 to customers interested in evaluating the use of XQE image sensors in next generation imaging platforms.

SiOnyx, Inc. Wins $1.53 Million Federal Contract

SiOnyx, Inc. won a $1,534,290 federal contract from the U.S. Naval Sea Systems Command, Dahlgren, Va., for the research and development of silicon based detectors.

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