Semiconductors and Semiconductor Equipment
Company Overview of Toshiba America Electronic Components, Inc.
Toshiba America Electronic Components, Inc. designs, develops, manufactures, and markets semiconductors, electronic components, and storage products. It offers products in various categories, including amorphous, analog and peripheral ICs, automotive, battery charger ICs, custom SoC/ASIC, diodes, electron tubes, imaging solutions, LCD technology, LED lighting, linear ICs, logic ICs, materials, memory, and motor controllers. The company also provides microprocessors, microwave, motor controller and driver ICs, optical semiconductor devices, radio frequency devices, wireless, and storage products. Its products are used in automotive, mobile, wireless, industrial, multimedia, LED solid-state li...
19900 MacArthur Boulevard
Irvine, CA 92612
Founded in 1989
Key Executives for Toshiba America Electronic Components, Inc.
Chief Executive Officer and President
Senior Vice President and Technology Executive of System Lsi Group
Vice President of Business Development - Discrete Business Unit
Vice President of Display Devices & Components Business Unit
Senior Vice President of Memory Marketing
Compensation as of Fiscal Year 2014.
Toshiba America Electronic Components, Inc. Key Developments
Toshiba America Electronic Components, Inc. Extends its LETERAS Family of White LEDs
Sep 17 14
Toshiba America Electronic Components, Inc. announced that it has extended its LETERAS family of white LEDs. The new TL1L3 series features ultra-compact devices that combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package. High-performance white LEDs are typically fabricated on expensive sapphire substrates using relatively small 100mm or 150mm wafers. Toshiba's LETERAS LEDs use a cost-effective GaN-on-Si process technology that allows GaN LEDs to be produced on 200mm silicon wafers, which lowers costs for manufacturers of general purpose and industrial LED lighting. The integrated lenses in Toshiba's newest LEDs make them suitable for implementation in security lighting, road lights, LED bulbs, down lights, and more. Devices in the TL1L3 series of 1.0W LEDs are housed in a 3.5mm x 3.5mm package, with a height (including the lens) of just 2.42mm. Despite their small size, the LEDs deliver up to 145 lumens (typ), depending on the correlated color temperature (CCT). The new TL1L3 LED series features seven devices that offer color temperatures from 2700K to 6500K. Minimum color rendering index (Ra) ratings of up to 80 contribute to natural-looking lighting. A low typical forward voltage (V(F)) of just 2.85V (at a forward current of 350mA) helps to keep power consumption at a minimum. TL1L3 LEDs are rated for operating temperatures between -40degC and 100degC and have a maximum power dissipation of 3.4W. Additionally, they offer a very low typical thermal resistance Rth (j-s) from LED junction to solder point of only 5degC/W.
Toshiba America Electronic Components, Inc. Unveils 20-Megapixel CMOS Image Sensor for High-End Smartphones and Mobile Handsets
Sep 15 14
Toshiba America Electronic Components, Inc. announced its 1.12-micron CMOS image sensor (CIS) for high-end mobile handsets and smartphones with 20-megapixel (MP) resolution. With an optical size of 1/2.4 inch, the T4KA7 sensor enables development of camera modules with a z-height of 6mm or less to meet consumer demand for thinner, lighter mobile devices. The new sensor joins Toshiba's recently announced 8MP and 13MP 1.12-micron back-side illuminated CIS solutions, which enable low-power, high-performance image capture and video recording for handheld mobile devices. The T4KA7 employs high-speed circuit technology that delivers a frame rate of 22 frames per second (fps) at full-resolution image capture -- an improvement of 83% compared to the company's previous 20MP sensor.
Toshiba America Electronic Components, Inc. Introduces New Low-Profile Photocouplers for IGBTs and Power MOSFETs
Sep 5 14
Toshiba America Electronic Components, Inc. announced a new series of low-profile, rail-to-rail output gate-drive photocouplers for directly driving low- to medium-power IGBTs and power MOSFETs: the TLP5751, TLP5752 and TLP5754. The TLP5751 offers a peak output current of +1.0A and can drive power MOSFETs and low-power IGBTs up to 20A. The +2.5A TLP5752 and +4.0A TLP5754 will drive power MOSFETs and IGBTs with current ratings to 80A and 100A, respectively. Operating temperature is from -40 degrees C to 110 degrees C, and target applications include home appliances, factory automation equipment and inverter designs that require high levels of isolation and stable operation across an extended temperature range. All of the new photocouplers are housed in a low-profile SO6L package. This package is 54% smaller in terms of height than photocouplers that use a DIP8 package - and uses just 43% of the board mounting area. Despite their low height, the new photocouplers have a guaranteed creepage distance of 8mm and an isolation voltage of 5kV. The TLP57xx devices offer rail-to-rail output, delivering stable operation and enhanced switching performance. Power supply voltage is from 15V to 30V and maximum supply current is 3.0mA. The TLP5751, TLP5752 and TLP5754 are comprised of a GaAlAs infrared LED and integrated high-gain, high-speed photodetector, and feature an undervoltage lockout (UVLO) function. An internal Faraday shield ensures a guaranteed common-mode transient immunity of +35kV/s. Maximum propagation delay time is rated at 150ns, and maximum propagation delay skew at 80ns.
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