Electronic Equipment, Instruments and Components
Company Overview of Efficient Power Conversion Corporation
Efficient Power Conversion Corporation provides enhancement mode gallium nitride based power management devices. The company provides eGaN FETs, which provide designers employing various power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter to attain performance enhancements compared with silicon power MOSFETs; eGaN Drivers that allow realization of the disruptive gains in high frequency and low duty cycle power conversion; and demo and development boards. Its products are used in various applications, such as server and computer DC-DC converters, power over Ethernet, isolated brick converters, point-...
909 North Sepulveda Boulevard
El Segundo, CA 90245
Founded in 2007
Key Executives for Efficient Power Conversion Corporation
Co-founder and Chief Executive Officer
Director of Applications Engineering
Director of Global Field Applications Engineering
Director of Worldwide Regional Marketing
Vice President of Sales - Asia
Compensation as of Fiscal Year 2013.
Efficient Power Conversion Corporation Key Developments
Efficient Power Conversion Corporation Introduces EPC9106, Reference Design for 150 W, 8 Class D Audio Amplifier
Nov 21 13
Efficient Power Conversion Corporation (EPC) introduced the EPC9106, a reference design for a 150 W, 8 Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimized or eliminated in an eGaN FET-based system. The EPC9106 features the EPC2016 eGaN FET in conjunction with the LM5113 100 V half-bridge gate driver from Texas Instruments. This board demonstrates that high quality sound can be achieved in a small size due to the performance capabilities of high frequency switching eGaN FETs when coupled with this dedicated eGaN driver. With this high efficiency, the EPC9106 design allows for the complete removal of any heatsink requirement, which also reduces the potential contribution to radiated EMI/EMC emissions. The power block of the EPC9106 including eGaN FETs, driver, inductor and input/output caps is an ultra compact 2.1 mm x 1.6 mm layout about the size of a dime! Despite its small size, the EPC9106 reference design achieves 96% efficiency at 150 W, 8 ohms, and 92% efficiency at 250 W, 4 ohms.
Efficient Power Conversion Corporation Introduces Family of Commercial High-Lead Enhancement Mode Gallium Nitride Fets
Oct 16 13
Efficient Power Conversion Corporation introduced devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations. The EPC2801 is a 100 V(DS) device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate. The EPC2815 is a 40 V(DS) with a maximum RDS(ON) of 4 milliohms. The EPC2818 is a 150 V(DS) device with a maximum RDS(ON) of 25 milliohms. In 1k piece quantities, the EPC2801 is priced at $7.51, the EPC2815 is priced at $6.35, and the EPC2818 is priced at $16.25.
Efficient Power Conversion Corporation Introduced the EPC9017 Half Bridge Development Board
Oct 3 13
Efficient Power Conversion Corporation introduced the EPC9017 half bridge development board for high current, high step down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low side (synchronous rectifier) FETs are connected in parallel since they will be conducting for a much longer period compared to the single high side (Control) FET. eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation. This development board expands upon EPC's work on optimal layout based on ultra-low inductance packages. The EPC9017 development board is a 100 V maximum device voltage, 20 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN) field effect transistor (FET). The half bridge configuration contains a single top side device and two parallel bottom devices and is recommended for high current, lower duty cycle applications.
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