April 19, 2014 11:46 AM ET

Semiconductors and Semiconductor Equipment

Company Overview of Intelligent Epitaxy Technology, Inc.

Company Overview

Intelligent Epixtaxy Technology, Inc. provides indium phosphide (InP) and gallium arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries. The company offers GaAs based products, such as pHEMT (pseudo-morpic high electron mobility transistor) and MHEMT products; and InP based products comprising HBT (hetero-junction bi-polar transistor), HEMT, RTT, and RTD products. It also provides Sb based products, including Type II SLS photodetectors, GaAsSb-base InP HBT, and Epi-ready GaSb substrates; Mis-matched Epi products consisting of III-V on Si, III-V on Ge, and High In content InGaAs on Si; and Opto-electronics, such as lasers, high-speed high-frequency surface-emitting la...

1250 East Collins Boulevard

Richardson, TX 75081

United States

Founded in 1999

Phone:

972-234-0068

Fax:

972-234-0069

Key Executives for Intelligent Epitaxy Technology, Inc.

Intelligent Epitaxy Technology, Inc. does not have any Key Executives recorded.

Intelligent Epitaxy Technology, Inc. Key Developments

Soitec and Intelligent Epitaxy Technology, Inc. Enter in Collaboration Agreement to Better Serve the Gallium Arsenide Market

Soitec and Intelligent Epitaxy Technology, Inc. signed a collaborative agreement to better serve the GaAs market. This partnership aims at addressing the market requirements for a reliable second source, while also extending the leadership position of both companies in the GaAs market as well as delivering the best product at the lowest cost for the customers. The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer. Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.

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