April 19, 2014 11:46 AM ET

Semiconductors and Semiconductor Equipment

Company Overview of Intelligent Epitaxy Technology, Inc.

Company Overview

Intelligent Epixtaxy Technology, Inc. provides indium phosphide (InP) and gallium arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries. The company offers GaAs based products, such as pHEMT (pseudo-morpic high electron mobility transistor) and MHEMT products; and InP based products comprising HBT (hetero-junction bi-polar transistor), HEMT, RTT, and RTD products. It also provides Sb based products, including Type II SLS photodetectors, GaAsSb-base InP HBT, and Epi-ready GaSb substrates; Mis-matched Epi products consisting of III-V on Si, III-V on Ge, and High In content InGaAs on Si; and Opto-electronics, such as lasers, high-speed high-frequency surface-emitting la...

1250 East Collins Boulevard

Richardson, TX 75081

United States

Founded in 1999





Key Executives for Intelligent Epitaxy Technology, Inc.

Intelligent Epitaxy Technology, Inc. does not have any Key Executives recorded.

Intelligent Epitaxy Technology, Inc. Key Developments

Soitec and Intelligent Epitaxy Technology, Inc. Enter in Collaboration Agreement to Better Serve the Gallium Arsenide Market

Soitec and Intelligent Epitaxy Technology, Inc. signed a collaborative agreement to better serve the GaAs market. This partnership aims at addressing the market requirements for a reliable second source, while also extending the leadership position of both companies in the GaAs market as well as delivering the best product at the lowest cost for the customers. The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer. Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.

Similar Private Companies By Industry

Company Name Region
4wave Incorporated United States
Roxboro Holdings Inc. United States
Covalar Technologies Group Inc United States
Blendics, Inc. United States
Standard Solar, Inc. United States

Recent Private Companies Transactions

No transactions available in the past 12 months.

Stock Quotes

Market data is delayed at least 15 minutes.

Company Lookup

Most Searched Private Companies

Company Name Geographic Region
NYC2012, Inc. United States
Lawyers Committee for Civil Rights Under Law United States
Bertelsmann AG Europe
Rush University United States
Greater Houston Partnership United States

Post a JobJobs

View all jobs

Sponsored Financial Commentaries

Sponsored Links

Report Data Issue

To contact Intelligent Epitaxy Technology, Inc., please visit www.intelliepi.com. Company data is provided by Capital IQ. Please use this form to report any data issues.

Please enter your information in the following field(s):
Update Needed*

All data changes require verification from public sources. Please include the correct value or values and a source where we can verify.

Your requested update has been submitted

Our data partners will research the update request and update the information on this page if necessary. Research and follow-up could take several weeks. If you have questions, you can contact them at bwwebmaster@businessweek.com.