Last ¥492.50 JPY
Change Today +4.40 / 0.90%
Volume 5.2M
6502 On Other Exchanges
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As of 8:43 PM 09/15/14 All times are local (Market data is delayed by at least 15 minutes).

toshiba corp (6502) Snapshot

Open
¥491.00
Previous Close
¥488.10
Day High
¥494.60
Day Low
¥487.50
52 Week High
01/21/14 - ¥505.00
52 Week Low
05/22/14 - ¥376.00
Market Cap
2.1T
Average Volume 10 Days
20.7M
EPS TTM
¥16.41
Shares Outstanding
4.2B
EX-Date
09/26/14
P/E TM
30.0x
Dividend
--
Dividend Yield
1.64%
Current Stock Chart for TOSHIBA CORP (6502)

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toshiba corp (6502) Details

Toshiba Corporation, together with its subsidiaries, is engaged in the research and development, manufacture, and sale of electronic and energy products worldwide. The company operates through five segments: Digital Products, Electronic Devices, Social Infrastructure, Home Appliances, and Others. The Digital Products segment offers personal computers, POS systems, multi-function peripherals, visual products, LCD TVs, Blu-ray recorders, tablets, and other products. The Electronic Devices segment provides semiconductors, hard disk drives, etc. The Social Infrastructure segment offers energy-related equipment, medical equipment, IT solutions, elevators, etc. The Home Appliances segment provides refrigerators, washing drying machines, light fixtures, air-conditioners, etc. The Others segment offers logistics services, etc. The company, through its subsidiary, Toshiba Transmission & Distribution Systems (India) Pvt. Ltd., is also involved in the engineering, design, procurement, manufacturing, delivery, erection, testing, commissioning, operation, maintenance, and other related activities for transformer, switchgear, and other equipment for power, transmission, and distribution systems. It has strategic alliance with NTT Communications Corporation. Toshiba Corporation was founded in 1875 and is headquartered in Tokyo, Japan.

200,260 Employees
Last Reported Date: 06/25/14
Founded in 1875

toshiba corp (6502) Top Compensated Officers

No compensation data is available at this time for the top officers at this company.

Executives, Board Directors

toshiba corp (6502) Key Developments

Toshiba and SanDisk Opens 2nd Phase of Fab 5

Toshiba Corporation and SanDisk Corporation opened the second phase of the No. 5 semiconductor fabrication facility (Fab 5) and the start of construction of the new No. 2 fabrication facility (Fab 2) at Yokkaichi Operations, Toshiba's NAND Flash memory plant in Mie prefecture, Japan. Toshiba started construction of the second phase of Fab 5 in August 2013, and Toshiba and SanDisk have overseen installation of production equipment in the expanded facility since July this year. Production in phase 2 began at the start of this month, with 15nm NAND flash memory process technology. Toshiba and SanDisk announced deployment of this jointly developed 15nm NAND flash process in April this year, with initial production in part of Fab 5 phase 1, and now target conversion of the remaining capacity in phase 1 to the new process technology. Toshiba is constructing the New Fab 2 to secure space to convert Toshiba and SanDisk's current 2D NAND capacity to 3D NAND, with expected readiness for production in 2016. Toshiba and SanDisk will together install production equipment and will determine installed capacity and output targets and schedules by closely monitoring market trends.

Toshiba Corporation Develops Tunneling Field Effect Transistors

Toshiba Corporation announced the development of Tunneling Field Effect Transistors (TFET) that utilize a new operating principle for ultra-low power MCU. This principle has been applied to the development of two different TFET using a CMOS platform compatible process. By applying each TFET into some circuit blocks, it is possible to achieve significant power reductions in MCUs. Rapid demand growth for wireless and mobile devices is driving demand for ultra-low power consumption of LSI. In this situation, innovative devices are strongly required to reduce operation voltage and stand-by leakage current. Tunneling Field Effect Transistor (TFET) utilizing operation novel principle with quantum tunneling effect has attracted much attention to achieve the ultra-low power LSI operation instead of conventional MOSFETs. Recently, the introduction of new materials, such as III-V compound semiconductors, has been widely investigated for TFET, as they have the potential to realize high performance. However, it is difficult to implement such materials into current CMOS platforms, due to the difficulties resulting from special process utilization. Toshiba has addressed this problem by optimizing TFET properties for some of key circuit blocks using common CMOS process. This approach enables simple installation of TFET into existing production line. Toshiba has developed two types of Si based TFET, one for logic circuits with ultra-low leakage current and optimized ON current, the other for SRAM circuits with extremely low transistor characteristics variation. Both utilize vertical type tunneling operation to enhance tunneling properties. In addition, the logic TFET employs precisely controlled epitaxial material growth process for tunnel junction formation with carbon and phosphorus doped Si. The Si/SiGe hetero junction has also been comprehensively evaluated to secure optimized configuration. Consequently, the device achieves an ON current two orders of magnitude higher than a Si TFET, which keeps same ultra-low OFF current, both in N and P-type TFET. For the SRAM type TFET development, Toshiba has proposed novel TFET operation architecture which doesn't need to form a structural tunnel junction. It eliminates process variability and results in significantly suppressed transistor characteristics variation. Toshiba is going to demonstrate integrating these TFET with conventional MOSFETs in a MCU to reduce total power consumption by one-tenth or more, targeting commercial production and use by 2017.

Toshiba Corp Aims to Launch Ultra-Low Power Microcomputer in 2017

Toshiba Corp. developed a new transistor technology for ultra-low power consumption microcomputers. The technology reduces the power consumption of microcomputers by more than 90% and enables to manufacture them in a CMOS process similar to the process used for existing standard transistors (MOSFETs). Toshiba aims to commercialize a microcomputer using the new technology in 2017, expecting that it will be used for battery-powered mobile and wearable devices as well as terminals for sensor networks. Toshiba will make three announcements related to the new technology at SSDM (International conference on Solid State Devices and Materials) 2014, an international conference on semiconductor device technologies, which runs from September 8 to 11, 2014, in Tsukuba City, Ibaraki Prefecture, Japan. Two of the three announcements are about the results that the company achieved in collaboration with Japan's National Institute of Advanced Industrial Science and Technology (AIST) in the project called ‘Development of Core Technologies for Green Nanoelectronics,’ which is conducted by Green Nanoelectronics Center (GNC).

 

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Industry Analysis

6502

Industry Average

Valuation 6502 Industry Range
Price/Earnings 28.1x
Price/Sales 0.3x
Price/Book 1.6x
Price/Cash Flow 35.8x
TEV/Sales NM Not Meaningful
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