Last $23.02 USD
Change Today -1.36 / -5.58%
Volume 2.3M
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freescale semiconductor ltd (FSL) Snapshot

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04/3/14 - $26.00
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freescale semiconductor ltd (FSL) Details

Freescale Semiconductor, Ltd. provides embedded processing solutions for automotive, networking, industrial, and consumer markets worldwide. The company’s embedded processor products comprise microcontrollers, such as ultra low power, low end 8-bit products to higher performance 16-bit, and 32-bit products with on-board flash memory, which provide the digital logic or intelligence for electronic applications and controlling electronic equipment; single-and multi-core microprocessors; and applications processors with embedded memory, and special purpose hardware and software for multimedia applications. It also offers wireless connectivity products for low power wireless communications functionality; communications processors that perform tasks related to control and management of digital data, and network interfaces; and radio frequency devices, such as power transistors, amplifiers, receivers, and tuners. In addition, the company provides analog and mixed-signal products, such as system-basis chips, auto engine control, stability and braking solutions, battery and power management, and motor control devices, CAN/LIN interface solutions, radar solutions, and signal conditioners; and sensors comprising pressure, inertial, magnetic, proximity, and gyroscopic sensors. Further, the company offers digital signal processors to perform baseband modem processing; digital signal controllers, which offer solutions for digital power conversion, motor control, and other applications in consumer, industrial, and healthcare markets. It serves original equipment manufacturers, distributors, original design manufacturers, and contract manufacturers through its direct sales force and distributors. The company was formerly known as Freescale Semiconductor Holdings I, Ltd. and changed its name to Freescale Semiconductor, Ltd. in April 2012. The company was incorporated in 2006 and is based in Austin, Texas. Freescale Semiconductor, Ltd. is a subsidiary of Freescale Holdings L.P.

16,800 Employees
Last Reported Date: 02/10/14
Founded in 2006

freescale semiconductor ltd (FSL) Top Compensated Officers

Chief Executive Officer, President and Direct...
Total Annual Compensation: $1.0M
Senior Vice President and General Manager of ...
Total Annual Compensation: $546.0K
Senior Vice President and General Manager of ...
Total Annual Compensation: $485.0K
Senior Vice President and General Manager of ...
Total Annual Compensation: $400.0K
Compensation as of Fiscal Year 2013.

freescale semiconductor ltd (FSL) Key Developments

Freescale Semiconductor, Ltd. Introduces its First Plastic Packaged Devices Designed Specifically for High Ruggedness Applications

Freescale Semiconductor, Ltd. introduced its first plastic packaged devices designed specifically for high ruggedness applications. The new MRFE6VP5150N/GN and MRFE6VP5300N/GN power amplifiers are the industry's first > 65:1 VSWR rated devices to be housed in over molded plastic packaging. Compared to ceramic RF packages, plastic packaging features superior manufacturability, outstanding thermal impedance and significant cost benefits. By combining the advantages of plastic packaging with the ruggedness traditionally associated with ceramic-housed devices, Freescale has achieved a significant technology milestone for the benefit of its RF power customer base. Industrial environments are notoriously harsh. Devices are required to not only survive, but perform optimally under varying voltages and operating conditions. With a survivability rating of > 65:1 VSWR with simultaneous over voltage and overdrive, Freescale's new MRFE6VP5150 and MRFE6VP5300 devices are designed to thrive in these environments while delivering outstanding system reliability and low maintenance costs. Target applications for the new products include FM broadcast, CO(2) lasers for medical applications, and VHF and UHF base stations for public safety radio installations. In addition to their ruggedness, Freescale's new MRFE6VP5150 and MRFE6VP5300 devices facilitate high gain across a wide frequency range, requiring fewer parts and reducing design complexity. The devices' high energy efficiency simplifies cooling, thus lowering operating expenses and shrinking form factors. These new RF power LDMOS transistors support wide frequency range utilization -- from 1.8 and 600 MHz. The MRFE6VP5150 device is capable of handling a load mismatch of > 65:1 VSWR at 50 Vdc, 230 MHz at multiple phase angles; and is capable of 150 Watts CW operation. In addition, both devices incorporate integrated stability enhancements and integrated ESD protection circuitry.

Freescale Semiconductor, Ltd. Introduces RF Power Tool System

Freescale Semiconductor, Ltd. introduced the RF Power Tool system, which is designed to simplify the development of RF power applications and help customers create new and differentiated RF power solutions. The only comprehensively integrated RF power application development system on the market, Freescale's RF Power Tool system minimizes the size, cost and complexity of RF lab equipment needed for application development by integrating multiple RF bench tool capabilities into a single box, reducing the need for a full bench of RF evaluation equipment. Including critical components needed to design innovative RF power applications into a modular portable unit, and fully compatible with a range of Freescale RF power evaluation boards and reference designs, the new Freescale RF Power Tool system simplifies the design process, reduces development costs and speeds time-to-market. The system runs directly from a PC or front panel, and can be initiated in only minutes at a cost significantly lower than a traditional RF bench setup. The Freescale RF Power Tool system allows users to define RF conditions for their applications and provides easy system validation and real-time performance monitoring and data logging to allow customers to evaluate application tradeoffs. This helps developers reduce the time needed to design, develop, evaluate and update their RF power applications such as heating, mobile radio, ISM and broadcast products. The tool offers temperature sensing, voltage sensing and power detection. An integrated Kinetis microcontroller capitalizes on Freescale's leadership in control solutions, while compatibility with Freescale RF evaluation boards from 5W to 1.25 kW and from 10 MHz to 2.5 GHz allows customers to benefit from Freescale's long history of RF power expertise.

Freescale Semiconductor Extends RF Technology Leadership with Second-Generation Airfast Power Amplifier Solutions

Freescale Semiconductor is introducing its second generation of Airfast(TM) RF power solutions, delivering a new level of performance for advanced wireless infrastructure equipment, including GSM/UMTS, CDMA/W-CDMA, LTE, and TD-LTE applications. Freescale's newest Airfast family of RF power solutions builds on the success and proven performance of the previous generation, which was comprised of 28V discrete, single-stage power amplifiers. Leveraging and enhancing first-generation Airfast circuitry, die, matching network and packaging technologies, Freescale has reached another industry milestone with the next generation of Airfast technology, which includes the first production RF power LDMOS parts to achieve 50% efficiency in a Doherty configuration. Additionally, second-generation Airfast power amplifiers expand the portfolio's breadth to include two-stage integrated circuits, incorporating multiple gain stages in a single package; as well as adding new offerings based on gallium nitride (GaN) and 48V LDMOS process technology. The new devices are complemented by a broad array of customer solutions and support. Application-specific reference designs give customers a head start in designing and developing a wide range of common systems with configuration and development instructions. Product Details: The initial second-generation Airfast products include: A2T07H310-24S -- 300W asymmetrical Doherty transistor for wireless infrastructure applications in the 720-960 MHz frequency band. In a Doherty configuration, this device breaks the 50% efficiency barrier at 8 dB back-off with 55 dBm peak power and 18.9 dB gain in a NI-1230S-4L2L package. A2T07D160W04S -- 160W dual-path transistor for wireless infrastructure applications in the 728-960 MHz frequency band. In Doherty configuration, this device has 51% efficiency at 7 dB output back-off with 52.5 dBm peak power and over 21.5 dB of gain in a NI-780S-4L package. A2T26H160-24S -- 160W RF asymmetrical Doherty transistor for wireless infrastructure applications in the 2496-2690 MHz frequency band. In a Doherty configuration, this device has 47% efficiency at 8 dB back-off with 52.5 dBm peak power and 15.7 dB gain in a NI-780S-4L2L package. A2I25D012N -- 12W RF integrated circuit for wireless infrastructure applications in the 2300-2690 MHz frequency band. In Doherty configuration, this device has 41% efficiency at 8 dB output back-off with 43.5 dBm peak power and 29 dB gain in a new TO-270WB-15 plastic package. A2I22D050N -- 50W RF integrated circuit for wireless infrastructure applications in the 2000-2200 MHz frequency band. In Doherty configuration, this device has 42% efficiency at 8 dB output back-off with 49 dBm peak power and 28 dB gain in a new TO-270WB-15 plastic package.


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