Last $12.40 USD
Change Today 0.00 / 0.00%
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IFNNF On Other Exchanges
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As of 8:10 PM 04/2/14 All times are local (Market data is delayed by at least 15 minutes).

infineon technologies ag (IFNNF) Snapshot

Open
$12.40
Previous Close
$12.40
Day High
$12.40
Day Low
$12.40
52 Week High
04/2/14 - $12.40
52 Week Low
04/25/13 - $7.58
Market Cap
14.0B
Average Volume 10 Days
0.0
EPS TTM
--
Shares Outstanding
1.1B
EX-Date
02/14/14
P/E TM
--
Dividend
$0.12
Dividend Yield
1.40%
Current Stock Chart for INFINEON TECHNOLOGIES AG (IFNNF)

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infineon technologies ag (IFNNF) Details

Infineon Technologies AG offers semiconductors and system solutions for automotive and industrial electronics, and chip card and security applications worldwide. Its products include automotive ICs, chip card and security ICs, DC/DC converters, discretes and standard products, ESD and EMI protection devices and filters, IGBT chips, interface devices, lighting ICs and LED drivers, linear voltage regulators, microcontrollers, metal-oxide-semiconductor field-effect transistors, power management ICs, power modules, discs and systems, radio frequency systems, sensors and wireless control products, silicon carbide power products, low side and high side switches, and wireless communication products. The company’s products are used in the automation, home appliances, data processing, electromobility, industrial, lighting, medical applications, mobile devices, motor control and drives, motorcycles, e-bikes and small electric vehicles, near field communication, power supplies, smart grids, solar energy systems, and wind energy systems. Infineon Technologies AG is headquartered in Neubiberg, Germany.

27,583 Employees
Last Reported Date: 02/3/14

infineon technologies ag (IFNNF) Top Compensated Officers

Chief Executive Officer, Executive Vice Presi...
Total Annual Compensation: €1.6M
Chief Financial Officer, Executive Vice Presi...
Total Annual Compensation: €1.3M
Executive Vice President and Member of the Ma...
Total Annual Compensation: €1.1M
Compensation as of Fiscal Year 2013.

infineon technologies ag (IFNNF) Key Developments

Infineon Technologies AG Unveils OPTIGA Trust P Solution

Infineon Technologies AG, has unveiled its OPTIGA Trust P, a programmable hardware-based solution for improved security of electronic devices in connected systems. The addition to the OPTIGA Trust family provides robust device authentication, protects computing systems from both intentional attacks and accidental damage from user error, and enhances security and privacy of stored data. Allowing the connection to only known, legitimate devices is a key element to any system security, and it becomes crucial when there are more and more connected devices used by enterprises and consumers. By integrating the OPTIGA Trust P into their designs, electronics manufacturers add a security safe to their embedded system. The OPTIGA Trust P generates and securely stores encryption keys for one-way and mutual authentication, thereby allowing to protect the device from malware, and to control access mechanisms for secure software updates. The programmability of the OPTIGA Trust P makes it a highly flexible solution, enabling these features to be adapted by a wide variety of connected systems. Any product that stores and exchanges confidential data - whether used in smart homes or factories - can rely on the encrypted communications capability of OPTIGA Trust P to enable information privacy. The OPTIGA Trust P is a Common Criteria EAL 5+ (high) certified secure trust anchor that addresses counterfeiting, privacy and security concerns. It uses public key cryptography to support both one-way and mutual authentication for anti-cloning applications. On-board key generation, key storage and secure key exchange allow creation of a secure communications channel and encryption of transmitted data. This can provide data privacy as well as the information verification between senders and receivers. The integrated key management and the access controls expand the use of the secure channel to encompass protection by permitting for secure remote updates and local access restrictions to the devices. As a programmable device, the OPTIGA Trust P is very flexible and easy to integrate into existing systems. It includes a JavaCard operating system to run security applets that can be configured for the specific needs of the system. Infineon provides the reference JavaCard security applets for most common functions, host code, and development tools to minimize development efforts. The OPTIGA Trust P SLJ 52ACA authentication chip is offered in a VQFN-32 (5mm x 5mm) package, with 150 kB memory. It runs the JavaCard OS, supports ECC, RSA, AES, TDES and SHA cryptography and its system interface is an ISO7816 UART (400 kbps data rate). Infineon's OPTIGA embedded security chips provide different levels of security for electronic systems, ranging from complex IT-infrastructures with many servers and computers to single systems that consist of the device and the suitable accessory, such as a MP3 player and headphones. The chips are embedded in the electronic devices and authenticate the individual elements of the system. Because security requirements vary depending on the application, Infineon offers different product families including OPTIGA TPM, which secures the system integrity of IT networks and OPTIGA Trust for secure device authentication.

Infineon Technologies AG Introduces 700W L-Band RF Power Transistor

Infineon Technologies AG introduced its 700W L-Band RF power transistor featuring 700W L-Band output power available for radar systems operating in the 1200-1400 MHz frequency range. By lowering part counts, the new device can reduce system cost and improve reliability while maintaining high ruggedness. Infineon's new power transistor, PTVA127002EV, is well-suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output. Based on the company's 50V LDMOS power transistor technology, the PTVA127002EV exhibits excellent efficiency; typically 55% across the 1200-1400 MHz band, with a P1dB output power of 700W, 16dB gain and low thermal resistance characteristics when measured with a 300 µS 10% duty cycle pulse. With the new addition, Infineon now offers a family of RF power transistors for 1200 - 1400 MHz system applications with rated power output of 25W, 50W, 350W and 700W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (-6V to 12V), and integrated electrostatic discharge (ESD) protection.

Infineon Technologies AG Unveils New OptiMOS FD 200V and 250V

Infineon Technologies AG has complemented its medium voltage portfolio with the new OptiMOS fast diode, or FD, 200V and 250V optimized for body diode hard commutation. The latest generation of Power MOSFETs is optimized for body diode hard commutation and leads to higher device ruggedness, lower voltage overshoot and reduced reverse recovery loss. This results in higher system reliability especially in hard switching applications such as Telecom Systems, Industrial Power Supplies, Class D Audio Amplifiers, Motor Control (for 48 - 110V systems) and DC/AC inverters. The OptiMOS FD family provides a reverse recovery charge (Q rr) optimized for the higher standards of performance. OptiMOS FD 200V and 250V achieve a Q rr reduction of 40% compared to a standard OptiMOS 200V and 250V. This means a significant leap forward in system reliability by reducing voltage overshoot and thus minimizing the need for a snubber circuit. The new OptiMOS FD shows improved hard commutation ruggedness and therefore can be used under more demanding conditions like higher dv/dt, di/dt and current densities compared to existing 200V and 250V technologies in the market. This results in an ease of use keeping the design process simple. Moreover the OptiMOS FD offers up to 45% on-state resistance (R DS(on) as well as up to 65% Figure of Merit (FOM) reduction compared to alternative devices leading to higher efficiency and power density.

 

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