Last €8.97 EUR
Change Today +0.075 / 0.84%
Volume 4.7M
IFX On Other Exchanges
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As of 3:45 PM 07/11/14 All times are local (Market data is delayed by at least 15 minutes).

infineon technologies ag (IFX) Snapshot

Open
€8.90
Previous Close
€8.89
Day High
€8.98
Day Low
€8.87
52 Week High
07/4/14 - €9.46
52 Week Low
07/31/13 - €6.49
Market Cap
10.1B
Average Volume 10 Days
5.0M
EPS TTM
€0.39
Shares Outstanding
1.1B
EX-Date
02/14/14
P/E TM
23.0x
Dividend
€0.12
Dividend Yield
1.34%
Current Stock Chart for INFINEON TECHNOLOGIES AG (IFX)

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infineon technologies ag (IFX) Details

Infineon Technologies AG offers semiconductors and system solutions for automotive and industrial electronics, and chip card and security applications worldwide. Its products include automotive ICs, chip card and security ICs, DC/DC converters, discretes and standard products, ESD and EMI protection devices and filters, IGBT chips, interface devices, lighting ICs and LED drivers, linear voltage regulators, microcontrollers, metal-oxide-semiconductor field-effect transistors, power management ICs, power modules, discs and systems, radio frequency systems, sensors and wireless control products, silicon carbide power products, low side and high side switches, and wireless communication products. The company’s products are used in the automation, home appliances, data processing, electromobility, industrial, lighting, medical applications, mobile devices, motor control and drives, motorcycles, e-bikes and small electric vehicles, near field communication, power supplies, smart grids, solar energy systems, and wind energy systems. Infineon Technologies AG is headquartered in Neubiberg, Germany.

28,096 Employees
Last Reported Date: 05/23/14

infineon technologies ag (IFX) Top Compensated Officers

Chief Executive Officer, Labor Director and M...
Total Annual Compensation: €1.6M
Chief Financial Officer, Executive Vice Presi...
Total Annual Compensation: €1.3M
Executive Vice President and Member of the Ma...
Total Annual Compensation: €1.1M
Compensation as of Fiscal Year 2013.

infineon technologies ag (IFX) Key Developments

Infineon Technologies AG Announces to expand Austrian Site in Villach

Infineon Technologies AG announced that its plans to expand its Austrian site in Villach. Core emphasis is on the expansion of expertise for the manufacturing of the future as well as R&D. "Pilot Space Industry 4.0" will realize and put to the test an innovative concept for networked and knowledge-intensive production. Research on new materials and technologies will also be intensified. The company’s expansion plans foresee investments and research costs amounting to a total of EUR 290 million, creating approximately 200 new jobs in the period from 2014 to 2017.

Infineon Technologies Ag Announces 1200V thinQ! SiC Schottky diodes

Infineon Technologies AG has expanded the SiC portfolio with the introduction of the fifth generation 1200V thinQ! SiC Schottky diodes. The new 1200V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100% improved surge current capability and excellent thermal behavior. These features result in significant efficiency improvement and robust operation in solar inverters, Uninterruptible Power Supplies (UPS), 3-phase SMPS (Switch Mode Power Supplies) and motor drives. The 'Generation 5' SiC diodes use a new compact chip design, realized by merged pn junction engineering in the Schottky cell-field. This enables a smaller differential resistance per chip area. As a result, a reduction of the diode losses by up to 30% compared to the previous generation can be achieved; for example in a front-end boost stage for a 3-phase solar inverter operating at 20kHz with full load. At a junction temperature of 150 °C, the typical forward voltage is only 1.7V, which is 30% less compared to the previous generation. This represents the lowest forward voltage available on the market for 1200V SiC diodes. Therefore, the new SiC diodes are especially well suited for applications operating at relatively high load like UPS systems. Moreover, the system efficiency is improved even under low switching frequencies. Depending on the diode ampere rating, a surge current capability now rated up to 14 times the nominal current ensures robust diode operation during application surge current events. This enables the elimination of a by-pass diode, thus reducing the complexity and system costs. The latest generation of Infineon's SiC Schottky diodes is a big step forward to exploit the full potential of the promising SiC material. Implementing the new 1200V thinQ!SiC Schottky diodes in combination with Infineon's 1200V Highspeed3 IGBT in boost and Power Factor Correction (PFC) boost topologies brings significant benefits on system level. Not only the losses in the diode are reduced, but also the performance of the Highspeed3 IGBT is improved due to reduced turn-on losses (which lead to smaller heat sink or increased efficiency) and lower EMI (smaller cost-effective EMI filter) compared to solutions using conventional Si diodes. The complete portfolio of the Generation 5 SiC diodes includes TO-247, TO-220 and DPAK packages. In addition, a new best-in-class 40A diode in a TO-247 package as well as dual-configurations with common cathode enabling further space savings for interleaved topologies are offered. Samples in TO-247 packages are available and volume production will start in July 2014. Variants in other packages will be introduced in 2015.

Infineon Technologies Ag Unveils DrBlade 2

Infineon Technologies AG has unveiled DrBlade 2, an integrated power stage device that combines two power MOSFETs and a DC/DC driver IC with integrated current and temperature sensing in a low-profile package. The power package uses galvanic and lamination processes, resulting in a significantly reduced package footprint and height, superior electrical resistance and inductance specs, and improved cooling capabilities. Infineon also offers complete high performance DC/DC voltage regulation solutions based on DrBlade 2 power stages and Infineon's fourth generation digital controller ICs. The integrated power stage contains small, very efficient and thermally enhanced MOSFETs and Infineon's latest driver technology. DrBlade 2 offers high precision current and temperature sense protection features for better system robustness and improved reliability. The power stage achieves more than 95% peak efficiency which translates into better system performance with significantly reduced power losses and less cooling requirements. End customers in server and datacom applications benefit from lower energy costs during operation and thus improved total cost of ownership over lifetime. The entire DC/DC system solution, including the new DrBlade 2 and digital controller, is compliant to RoHS 2016 and absolutely lead free. The full system solution comes with a Graphic User Interface (GUI) to program controller parameters and to tune voltage regulation while in operation. All parameters of the controller are set via firmware that is stored in non-volatile memory. Accessible over I2C bus and PMBus, the system engineer is able to adjust all parameters of operation in real time without the need to interrupt active regulation.

 

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Price/Earnings 23.1x
Price/Sales 2.4x
Price/Book 2.5x
Price/Cash Flow 23.0x
TEV/Sales 1.8x
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