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09/3/14 - $11.00
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renesas electronics corp (RNECF) Details

Renesas Electronics Corporation researches, develops, designs, manufactures, sells, and services semiconductors worldwide. It offers microcontrollers and microprocessors; power devices, such as power MOSFETs, IGBTs, intelligent power devices, diodes, thyristors and triacs, and transistors; analog and mixed signal products, including power management, ICs/driver ICs, analog ICs for automotives, and interfaces, as well as ICs for leakage detection, audio, computing and peripherals, cameras, and graphic controllers. The company also provides general-purpose linear and logic analog ICs; RF devices; optoelectronics comprising photo couplers, solid state relays, fiberoptic devices, and lasers; LSIs for automotives, factory automation, and communications and mobile devices; memory products, including SRAM, EEPROM, DRAM, and TCAM; ASIC products comprising gate arrays, cell-based ICs, analog masters, mixed signal ASICs, customizable MCUs, and programmable XBridge; and USB 3.0 host controllers. Its products are used in various applications, such as automotive, connectivity, consumer, energy, human interface, industrial/building and home, medical and healthcare, mobile, motor control, PC and PC peripheral, power supply, and RF front end applications. Renesas Electronics Corporation was founded in 2002 and is headquartered in Tokyo, Japan.

27,201 Employees
Last Reported Date: 06/25/14
Founded in 2002

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renesas electronics corp (RNECF) Key Developments

Renesas Electronics Corporation Announces Development of New Circuit Technology for Automotive Information SoCs

Renesas Electronics Corporation announced the development of a new circuit technology for automotive information SoCs (system on chips) at 16 nanometer (nm) and beyond. Using this new circuit technology, Renesas tested the prototype of an SRAM, at the 16 nm node as the cache memory for CPU and real time image processing blocks in an SoC, and successfully confirmed that this SRAM operates at the high speed of 641 ps (picosecond: 1/1,000,000,000,000 of a second) under the low voltage condition of 0.7 V. Recently, automotive information systems, such as car navigation systems and advanced driver assistance systems (ADAS), are designed with the automatic driving systems of the future in mind, and have seen significant evolution. As a result, there are now strong demands for increased performance in aspects such as lower voltage operation and higher operating speeds in the CPU and real time image processing, and the planar MOSFET devices used up to now are said to have reached their limits. To address these demands, the new FinFET adopts a finned structure, to suppress power consumption and increase performance. It is, however, difficult to optimize the circuit constants in these FinFETs, and the development of new circuit design technologies has become an issue. To overcome this issue, Renesas has now developed a new circuit technology for FinFET devices to allow high speed read and write operations to be performed in a stable manner even at low operating voltages. Key features are: The word line overdrive method makes both high speed read/write operations possible at low voltages; and High reliability optimal designs that take the variations inherent in the FinFET device into account. The newly developed assist circuit technology makes it possible to achieve both high speed and stable operation, which are expected to be problematic as device fabrication process feature sizes continue to shrink, and it will contribute significantly to performance improvements in real time image processing that is required for the driving support systems and automated driving systems of the future.

Renesas Electronics Introduces High-Reliability Advanced Low-PowerSRAM Products

Renesas Electronics Corporation introduced 5 new product versions in the RMLV0816B and RMLV0808B series of Advanced Low-PowerSRAM (Advanced LP SRAM), the company’s SRAM (static random access memory) devices. The new memory devices have a density of 8 megabits (Mb) and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers (nm). In the Advanced LP SRAM Series, which can achieve soft error (Note 1) free and latch-up (Note 2) free operation, Renesas started mass production of 4 Mbit products fabricated in a fine feature size process with a 110 nm circuit line width in December 2013, and now has launched the 8 Mbit products in this series. The new devices are high-reliability products that achieve the same soft error rate as Renesas' earlier products that were fabricated in a 150 nm process. They also achieve low-power operation with a standby current of maximum of 2 microamperes (µA) at 25°C, making them suitable for data storage in battery-backup devices. Renesas™ low-power SRAM products are used extensively in a wide range of products including industrial, office automation, communication, automotive, and consumer applications, and earned the industry's market share in 2013. As in the past, along with increased performance and functionality in user systems, the reliability of the system as a whole is critically important. This is why high reliability is required in the SRAM, which stores important information such as the system software and data. In particular, measures to deal with soft errors due to alpha rays and neutrons in cosmic radiation are seen as critical. Since Renesas has added a capacitor to the memory node in the cell of the Advanced LP SRAM devices, these devices have an extremely high resistance to soft errors. A common method for dealing with soft errors is to correct the errors that occur using an ECC (error correcting code) circuit embedded in the SRAM or user system. There are, however, limits to such techniques, such as not being able to correct multiple bit errors depending on the performance of the ECC itself. To deal with this issue, the Renesas Advanced LP SRAM adopts structural measures that suppress soft error occurrence itself. The results of system soft error testing in Renesas™ currently mass produced 150 nm process Advanced LP SRAM has shown that these devices are essentially soft error free. Additionally, the load transistors (p channel) in the SRAM cell are formed as polysilicon TFT devices, and since they are stacked in the upper layer of the n-channel MOS transistors that are formed on the silicon substrate, only n-channel transistors are formed on the underlying silicon substrate. As a result, there are no parasitic thyristor structures in the memory area and thus these devices have a structure in which latch-up cannot, in principle, occur. As a result of these design aspects, these products are SRAM devices with extremely high reliability compared to full CMOS type devices that have the ordinary memory cell structure. Thus they can contribute to even higher performance and reliability in equipment that requires high reliability, such as FA (factory automation) equipment, test equipment, smart grid related equipment, and transportation systems. Furthermore, Renesas Advanced LP SRAM achieves an even more compact cell size by combining polysilicon TFT stacking technology with stacked transistor technology. For example, the cell size in Renesas™ 110 nm Advanced LP SRAM is comparable to that in a full CMOS type SRAM fabricated in a 65 nm process. Renesas intends to further strengthen its SRAM product lineups by adding new 16 Mbit products fabricated in a 110 nm process.

Renesas Electronics Corporation Eases Design Complexities for Healthcare, Building Automation, and Home Appliances with True Low-Power and Capacitive Touch Sensing

Renesas Electronics Corporation announced that the company is expanding the use of touch panel displays in healthcare, building automation and home appliance applications with the new RX113 Group of microcontrollers (MCUs). Part of the RX100 Series, the new MCUs offer a single-chip solution with unique touch sensor IP and low-power technologies. This enables significantly reduced power, size, and development costs for entry-level devices in these markets, as well as for other cost-sensitive, capacitive touch-based applications for the growing Internet of Things (IoT) market. Renesas' innovative touch sensor intellectual property (IP) core achieves both high noise immunity and high sensitivity, offering touch key operation on wet and curved touch panels. Based on Renesas' RX CPU core, the RX113 Group of MCUs delivers the performance, lowest power, advanced connectivity and extensive digital signal processing (DSP) capability compared to other entry-level 32-bit MCUs. In addition to a capacitive-touch sensing unit and unprecedented ultra-low power, these full-featured 32-bit MCUs also support LCD control, USB 2.0, audio and more. The RX113 devices support multiple memory configurations and communications peripherals to keep pace with expanding embedded systems design requirements, including: Up to 512 KB of flash memory and 64 KB of SRAM; Segment LCD control/drive capability up to 288 segments for support of the latest system displays; I2S for audio processing, SSI (Serial Sound Interface) and SPI (serial peripheral interface) protocols; 12-bit ADC (analog-to-digital converter) with internal voltage reference, and a 12-bit DAC (digital-to-analog converter) and a temperature sensor; Complete DSP Processing capability, including Hardware-based Divide, for efficient near-sensor processing. Innovative Capacitive Touch Sensing Technology Provides Superior Features and Capabilities: The RX113 MCUs support both mutual- and self-capacitance methods for key manipulation detection. The Capacitive Touch sensing unit supports up to 36 channels of key input (in mutual-capacitance mode). The self-capacitance method provides significantly improved noise immunity and sensitivity compared to previous implementations. The new MCUs also support Renesas Electronics' first mutual-capacitance method, which allows touch key operation even when the user is wearing gloves and is highly resistant to incorrect detection even when there is water on the touch key area itself. The Capacitive Touch sensing unit supports acrylic panels over 10 mm thick, which allows for flexible designs, such as those using curved panels, to be implemented. Renesas has improved the sensitivity by approximately 5 times, enabling user interfaces with non-traditional surfaces to be implemented. True Low Power Technology: The RX Family delivers flexible power management and optimum power consumption for all use cases. The 32-bit RX113 MCUs achieve the level of power efficiency, featuring operating mode power consumption as low as 0.1 mA/MHz (typical) and only 0.44 uA power consumption in low-power mode (RAM contents retained). They also achieve power consumption as low as 1.6 uA in LCD drive mode (internal step-up and 1/3 bias operation). The RX113 Group has three different run modes, three low-power modes and a flexible clock system. For instance, the Low Power Fast Wakeup capability enables the MCUs to operate at 0.1 mA/MHz in Run Mode and 0.44 uA in software standby from which it can wake-up in only 4.8us. It integrates a Zero Wait State Flash with Erase/Write as low as 1.8V, 1KB erase block size and background operation (BGO), and offer erase times as low as 10ms per block. Development Ecosystem: Renesas provides a comprehensive development ecosystem for the RX Family, including e(2) studio, a powerful Eclipse-based IDE, as well as compilers, debuggers, code generation tools and flash programmers. The RX113 devices will be supported by the extensive RX ecosystem, comprising a wide range of third-party tools, RTOS, and middleware. Support for the IAR compiler and IAR Embedded Workbench IDE and for the Micrium RTOS and Spectrum components is readily available at this time. Pricing and Availability: Samples of the RX113 MCUs are available in package pin counts ranging from 64- to 100-pins and on-chip flash memory capacities ranging from 128 to 512 kilobyte (KB) for a total of twelve individual products. The MCUs are currently in mass production. Pricing varies depending on memory capacity, package and number of pins. For example, the RX113 MCU with 128 KB of flash equipped in a 100-pin LQFP package is priced at $3.00 per unit in 10,000-unit quantities. Mass production is scheduled to begin in February 2015 and is expected to reach a combined volume of 1,000,000 units per month by January 2016.


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